Open AccessEffects of the thickness on resistive switching characteristics of CrOx thin films
Author(s) -
Ngoc Kim Pham,
Thắng Bách Phan,
Vinh Cao Trần
Publication year - 2016
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v19i2.794
Subject(s) - materials science , resistive touchscreen , raman spectroscopy , microstructure , sputtering , morphology (biology) , composite material , thin film , phase (matter) , nanotechnology , optics , chemistry , electrical engineering , physics , organic chemistry , biology , genetics , engineering
In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.