Open AccessInvestigation of the crystal structure and the morphology of In and Ga-doped ZnO thin films applied for thermoelectric materials
Author(s) -
Nhat Tran Hong Nguyen,
Vinh Cao Trần,
Thắng Bách Phan
Publication year - 2016
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v19i2.793
Subject(s) - materials science , crystallinity , thin film , doping , dopant , thermoelectric effect , crystal structure , chemical engineering , optoelectronics , nanotechnology , composite material , crystallography , chemistry , physics , thermodynamics , engineering
Undoped ZnO, Ga-doped ZnO, Ga and In dually doped-ZnO thin films were deposited by using magnetron Dc technique. Results from XRD, EDX and FESEM confirm influences of Ga and In dopants on the crystalline structure and the crystallinity of the ZnO thin films. Ga-doped ZnO thin films possess the highest crystallinity, while In and Ga dually doped-ZnO thin films were the worst. Through single and dual doping, the crystalline quality of the ZnO thin films can be controlled. Further researchs will be focused on the thermoelectric properties of the undoped ZnO and doped ZnO thin films.