Open AccessStudy on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering spectrum
Author(s) -
Tuấn Anh Đào,
QuocHung Nguyen,
Loan Nguyen Phuong Vuong,
Hung Le
Publication year - 2015
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v18i3.823
Subject(s) - photoluminescence , wurtzite crystal structure , materials science , raman spectroscopy , raman scattering , doping , thin film , substrate (aquarium) , spin coating , analytical chemistry (journal) , optoelectronics , optics , nanotechnology , zinc , chemistry , physics , oceanography , chromatography , geology , metallurgy
Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.