Study on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering spectrum | Zendy

Tuấn Anh Đào | Zendy; Quang Nhat Nguyen | Zendy; Loan Nguyen Phuong Vuong | Zendy; Hung Vu Tuan Le | Zendy

Open Access

Study on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering spectrum

Author(s) -

Tuấn Anh Đào,

Quang Nhat Nguyen,

Loan Nguyen Phuong Vuong,

Hung Vu Tuan Le

Publication year - 2015

Publication title -

science and technology development journal

Language(s) - English

Resource type - Journals

ISSN - 1859-0128

DOI - 10.32508/stdj.v18i3.823

Subject(s) - photoluminescence , wurtzite crystal structure , materials science , raman spectroscopy , raman scattering , doping , thin film , substrate (aquarium) , spin coating , analytical chemistry (journal) , optoelectronics , optics , nanotechnology , zinc , chemistry , physics , oceanography , chromatography , geology , metallurgy

Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.

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