Open AccessStudying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering
Author(s) -
Phuc Huu Dang,
Duan Van Nguyen,
Vu Si Hoai Nguyen,
Hieu Van Le,
Tran Le
Publication year - 2015
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v18i1.1031
Subject(s) - materials science , crystallite , tin oxide , doping , sputter deposition , rutile , electrical resistivity and conductivity , thin film , analytical chemistry (journal) , annealing (glass) , sputtering , tetragonal crystal system , transmittance , cavity magnetron , ceramic , optoelectronics , tin dioxide , nanotechnology , composite material , chemical engineering , metallurgy , crystal structure , chemistry , crystallography , electrical engineering , chromatography , engineering
Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.