Open AccessInfluence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate
Author(s) -
Tam Thi Bang Dao,
Thang Bach Pham
Publication year - 2014
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v17i3.1366
Subject(s) - crystallinity , annealing (glass) , materials science , thin film , monoclinic crystal system , chemical engineering , grain size , composite material , resistive touchscreen , electrical resistivity and conductivity , nanotechnology , crystallography , crystal structure , chemistry , electrical engineering , engineering
In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WOx thin films. The resutls show that as-deposited WOx thin films and annealed WOxthin films at 300oC, 600oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WOx thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WOx/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WOx thin films increases under an the annealing treatment.