Open AccessStudy on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application
Author(s) -
Chien Mau Dang,
Tung Thanh Bui,
Hung M. Le,
Vu Ngoc Hoang,
Linh Ngoc Tran,
Lan Truong,
Th. Nguyen-Tran
Publication year - 2013
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v16i1.1425
Subject(s) - materials science , sheet resistance , optoelectronics , amorphous silicon , heterojunction , monocrystalline silicon , plasma enhanced chemical vapor deposition , silicon , amorphous solid , solar cell , nanocrystalline silicon , wafer , layer (electronics) , crystalline silicon , sputter deposition , indium tin oxide , chemical vapor deposition , substrate (aquarium) , thin film , sputtering , nanotechnology , chemistry , crystallography , oceanography , geology
In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. Then, indium tin oxide (ITO) layer was formed by DC magnetron sputtering as the top electrode and the anti-reflection coating layer. In order to obtain the high efficiency heterojunction structure, two important aspects were focused: improving the passivation properties of a-Si/c-Si heterojunction and reducing the light absorption and the sheet resistance of ITO layers. It was found that hydrogenated amorphous silicon (a- Si:H) layers can be grown at low substrate temperature, about 200°C. High-quality ITO layers with the sheet resistance less than 15 ohm/sq and the transmittance of about 70%, can be deposited at relatively low DC power (50W).