Open AccessSIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2
Author(s) -
Hien Sy Dinh
Publication year - 2012
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v15i3.1812
Subject(s) - voltage , current (fluid) , nanoelectronics , transistor , matlab , spin (aerodynamics) , field effect transistor , interface (matter) , computer science , electrical engineering , field (mathematics) , electronic engineering , optoelectronics , physics , materials science , engineering , nanotechnology , mathematics , pure mathematics , bubble , maximum bubble pressure method , parallel computing , thermodynamics , operating system
We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.