
SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR
Author(s) -
Hien Sy Dinh,
Trung Hoang Huynh
Publication year - 2009
Publication title -
khoa học công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-0128
DOI - 10.32508/stdj.v12i13.2389
Subject(s) - mosfet , transistor , threshold voltage , field effect transistor , current (fluid) , voltage , matlab , computer science , channel (broadcasting) , function (biology) , carbon nanotube field effect transistor , power (physics) , materials science , electronic engineering , electrical engineering , physics , engineering , quantum mechanics , evolutionary biology , biology , operating system
Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.