Open AccessChemical dissolution of GaAs, InAs, InAs (Sn), GaSb and InSb single crystals in H2O2–HBr–tartaric acid etching compositions
Author(s) -
Íàí Ëàøêàðüîâà,
Aeèòîìèðñüêèé Áàçîâèé Ôàðìàöåâòè÷íèé Êîëåäae,
Aeèòîìèðñüêèé Äåðaeàâíèé Óíâåðñèòåò ìåí âàíà Ôðàíêà
Publication year - 2020
Publication title -
voprosy himii i himičeskoj tehnologii/voprosy himii i himičeskoj tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.278
H-Index - 7
eISSN - 2413-7987
pISSN - 0321-4095
DOI - 10.32434/0321-4095-2020-131-4-163-171
Subject(s) - tartaric acid , dissolution , etching (microfabrication) , materials science , isotropic etching , optoelectronics , crystallography , nanotechnology , chemistry , layer (electronics) , organic chemistry , citric acid