Open AccessDesign of Static Random Access Memory for Minimum Leakage using MTCMOS Technique
Author(s) -
T. Esther Rani,
Rameshwar Rao
Publication year - 2013
Publication title -
cvr journal of science and technology/cvr journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 2581-7957
pISSN - 2277-3916
DOI - 10.32377/cvrjst0409
Subject(s) - leakage (economics) , computer science , leakage power , embedded system , engineering , electrical engineering , voltage , transistor , economics , macroeconomics