Open AccessEpitaxial growth, morphology and temperature stability of quartzlike dioxide germanium crystals
Author(s) -
V. S. Balitsky,
Denis Balitsky,
D.Y. Pushcharovsky,
L. V. Balitskaya,
Т. В. Сеткова,
T. N. Dokina
Publication year - 2019
Publication title -
doklady akademii nauk. rossijskaâ akademiâ nauk
Language(s) - English
Resource type - Journals
ISSN - 0869-5652
DOI - 10.31857/s0869-5652485167-70
Subject(s) - quartz , germanium , rutile , epitaxy , materials science , substrate (aquarium) , layer (electronics) , chemical engineering , phase (matter) , crystallography , analytical chemistry (journal) , mineralogy , nanotechnology , chemistry , optoelectronics , composite material , chromatography , organic chemistry , geology , oceanography , silicon , engineering
The conditions and mechanisms of epitaxial growth of quartz-like a-GeO2 crystals on quartz substrates using an evaporative-recirculation method are considered. Relatively homogenous a-GeO2 crystals weighing up to 200 g are grown at a growth rate of up to 0.3 mm/day. It is established that molecular adhesion at the boundary between the quartz substrate and the overgrown layer of a-GeO2 cannot prevent its transition to a stable poorly soluble rutile-like phase. This makes it impossible to grow high-germanium quartz single crystals industrially using a mixture of quartz and quartz-like a-GeO2 as a nutrient. However, this process can be implemented if other more soluble germanium-containing compounds, such as quartz-like Si-containing germanium-oxide, are found.