Open AccessSimplified Dynamic Model of High-Power Field-Effect Transistors for Studying Switch Modes of Radio Frequency Devices
Author(s) -
A. Ganbayev,
V. Filin
Publication year - 2019
Publication title -
trudy učebnyh zavedenij svâzi
Language(s) - English
Resource type - Journals
eISSN - 2712-8830
pISSN - 1813-324X
DOI - 10.31854/1813-324x-2019-5-2-66-75
Subject(s) - transistor , radio frequency , power (physics) , electrical engineering , mode (computer interface) , signal (programming language) , field effect transistor , electronic engineering , computer science , engineering , physics , voltage , quantum mechanics , programming language , operating system