Open AccessDifferent Casues For Reduction Of Lekage Current In Sram:A State Of The Art
Author(s) -
M. KAVITHA
Publication year - 2020
Publication title -
journal of vlsi circuits and systems
Language(s) - English
Resource type - Journals
ISSN - 2582-1458
DOI - 10.31838/jvcs/02.01.05
Subject(s) - dram , static random access memory , leakage (economics) , cmos , computer science , electrical engineering , electronic engineering , embedded system , computer hardware , engineering , economics , macroeconomics
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