Open AccessTHE RESULTS OF SIMULATION OF THE PROCESS OF OCCURRENCE OF DAMAGES TO THE SEMICONDUCTOR ELEMENTS UNDER THE INFLUENCE OF MULTI-FREQUENCY SIGNALS OF SHORT DURATION
Publication year - 2020
Publication title -
journal of critical reviews
Language(s) - English
Resource type - Journals
ISSN - 2394-5125
DOI - 10.31838/jcr.07.13.18
Subject(s) - semiconductor , diode , semiconductor device , affection , semiconductor device fabrication , transistor , materials science , electronic engineering , electrical engineering , engineering , voltage , optoelectronics , nanotechnology , psychology , social psychology , layer (electronics) , wafer