Open AccessMathematical modeling of the physical mechanism of the formation of a bulk surface charge in semiconductors for intelligent frequency sensors for gas concentration
Author(s) -
А. V. Osadchuk,
В. С. Осадчук,
Ya.A. Osadchuk
Publication year - 2019
Publication title -
optiko-elektronnì ìnformacìjno-energetičnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2311-2662
pISSN - 1681-7893
DOI - 10.31649/1681-7893-2019-38-2-107-112
Subject(s) - semiconductor , adsorption , depletion region , space charge , materials science , methane , poisson's equation , chemical physics , electrical impedance , surface charge , charge carrier , semiconductor device , elementary charge , layer (electronics) , optoelectronics , chemistry , electron , nanotechnology , physics , quantum mechanics , organic chemistry