Open AccessPOROUS SILICON/SnO2:F JUNCTION. EFFECT OF DOPING ON THE ELECTRICAL AND STRUCTURAL PROPERTIES
Author(s) -
F.A. Garcés,
Leandro N. Acquaroli,
A. Dussán,
R. R. Koropecki,
R. Arce
Publication year - 2012
Publication title -
anales/anales afa
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.14
H-Index - 2
eISSN - 1850-1168
pISSN - 0327-358X
DOI - 10.31527/analesafa.2011.22.2.32
Subject(s) - humanities , physics , doping , materials science , art , optoelectronics