Open AccessElectrophysical characteristics of nanodimensional cobalte-cuprate-manganite LaNa2CoCuMnO6 and nickelite-cuprate-manganite LaNa2NiCuMnO6
Author(s) -
Sh. B. Kassenova,
Zh.I. Sagintayeva,
B.K.x Kassenov,
E.E. Kuanyshbekov,
Zh.S. Bekturganov,
A.K. Zeinidenov
Publication year - 2020
Publication title -
ķaraġandy universitetìnìn̦ habaršysy. fizika seriâsy/ķaraġandy universitetìnìņ habaršysy. fizika seriâsy
Language(s) - English
Resource type - Journals
eISSN - 2663-5089
pISSN - 2518-7198
DOI - 10.31489/2020ph2/43-49
Subject(s) - dielectric , manganite , materials science , semiconductor , electrical resistivity and conductivity , cuprate , conductivity , condensed matter physics , lanthanum , band gap , lanthanum manganite , analytical chemistry (journal) , optoelectronics , doping , electrical engineering , chemistry , physics , electrode , inorganic chemistry , engineering , chromatography , ferromagnetism , electrolyte
The temperature dependences of the electric capacity, dielectric constant and electrical resistance of cobaltecuprate-manganite of lanthanum and sodium of LaNa2CoCuMnO6 and nickelite-cuprate-manganite of lanthanum and sodium of LaNa2NiCuMnO6 were investigated on the LCR-800 serial device (manufactured by Taiwan) at the operating frequencies of 1 kHz, 5 kHz, and 10 kHz in interval of 293–483 K through 10 K continuously in dry air. It was determined that LaNa2CoCuMnO6 in interval of 293–483 K shows the semiconductor conductivity. A band gap ( Е) is 0.54eV. The compound has the high values of the dielectric constant, which are equal 2.17106 (1 kHz), 2.31105 (5 kHz), 8.22104 (10 kHz) at 293 K and 8.49108 (5 kHz), 7.87107 (10 kHz) at 483 K. LaNa2NiCuMnO6 in interval of 293–483 K demonstrates the semiconductor conductivity ( Е = 0.48 eV), at 433–443 K — the metallic conductivity and at 453–483 K — the semiconductor conductivity ( Е = 2.33 eV).The values of the dielectric constant are 4.97103 (1 kHz), 9.2102 (5 kHz), 5.1101 (10 kHz) at 293 K and 1.02106 (1 kHz), 1.98105 (5 kHz) and 9.76104 (10 kHz) at 483 K. The compounds can be classified as the narrow-band gap semiconductors and they are of interest for the semiconductor and microcapacitor technologies.