Electrophysical characteristics of nanodimensional cobalte-cuprate-manganite LaNa2CoCuMnO6 and nickelite-cuprate-manganite LaNa2NiCuMnO6
Author(s) -
Sh. B. Kassenova,
Zh.I. Sagintayeva,
B. K. Kassenov,
Е. Е. Куанышбеков,
Zh.S. Bekturganov,
A.K. Zeinidenov
Publication year - 2020
Publication title -
bulletin of the karaganda university physics series
Language(s) - English
Resource type - Journals
eISSN - 2663-5089
pISSN - 2518-7198
DOI - 10.31489/2020ph2/43-49
Subject(s) - dielectric , manganite , materials science , semiconductor , electrical resistivity and conductivity , cuprate , conductivity , condensed matter physics , lanthanum , band gap , lanthanum manganite , analytical chemistry (journal) , optoelectronics , doping , electrical engineering , chemistry , physics , electrode , inorganic chemistry , engineering , chromatography , ferromagnetism , electrolyte
The temperature dependences of the electric capacity, dielectric constant and electrical resistance of cobaltecuprate-manganite of lanthanum and sodium of LaNa2CoCuMnO6 and nickelite-cuprate-manganite of lanthanum and sodium of LaNa2NiCuMnO6 were investigated on the LCR-800 serial device (manufactured by Taiwan) at the operating frequencies of 1 kHz, 5 kHz, and 10 kHz in interval of 293–483 K through 10 K continuously in dry air. It was determined that LaNa2CoCuMnO6 in interval of 293–483 K shows the semiconductor conductivity. A band gap ( Е) is 0.54eV. The compound has the high values of the dielectric constant, which are equal 2.17106 (1 kHz), 2.31105 (5 kHz), 8.22104 (10 kHz) at 293 K and 8.49108 (5 kHz), 7.87107 (10 kHz) at 483 K. LaNa2NiCuMnO6 in interval of 293–483 K demonstrates the semiconductor conductivity ( Е = 0.48 eV), at 433–443 K — the metallic conductivity and at 453–483 K — the semiconductor conductivity ( Е = 2.33 eV).The values of the dielectric constant are 4.97103 (1 kHz), 9.2102 (5 kHz), 5.1101 (10 kHz) at 293 K and 1.02106 (1 kHz), 1.98105 (5 kHz) and 9.76104 (10 kHz) at 483 K. The compounds can be classified as the narrow-band gap semiconductors and they are of interest for the semiconductor and microcapacitor technologies.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom