Open AccessPrinciples of synergetics in training of specialists physical and technical profile
Author(s) -
L.V. Chirkova,
K.T. Yermaganbetov,
L. Tezekbaeva
Publication year - 2020
Publication title -
ķaraġandy universitetìnìn̦ habaršysy. fizika seriâsy/ķaraġandy universitetìnìņ habaršysy. fizika seriâsy
Language(s) - English
Resource type - Journals
eISSN - 2663-5089
pISSN - 2518-7198
DOI - 10.31489/2020ph2/136-142
Subject(s) - electronics , transistor , electrical engineering , charge carrier , bipolar junction transistor , semiconductor , engineering physics , insulated gate bipolar transistor , optoelectronics , materials science , computer science , engineering , voltage
The article discusses the use of the basic principles of synergetics in the training of physicists in the study of the discipline «Physical Electronics». The work is based on many years of experience in teaching the discipline at the Department of Radiophysics and Electronics of Karaganda State University named after E.A. Buketova. It is shown that the system «semiconductor structure + external source of electrical energy» can be considered as an open nonequilibrium thermodynamic system in which cooperative processes of spontaneous self-organization due to the constant exchange of energy and matter develop. The physical processes in bipolar transistors in the active mode of operation are analyzed. By means of a qualitative theoreti- cal analysis, it was established that the system under consideration interacts with self-organizing processes that result in spontaneous lowering of the potential barrier in the emitter region and an increase in similar barter in the region of collector junctions; spontaneous injection of minority charge carriers into the base is observed, resulting in a spontaneous increase in the concentration of minority charge carriers in the base layer adjacent to the transition. Spontaneous transfer of charge carriers through the base to the collector causes a spontaneous decrease in the collector junction resistance to the resistance of a forward-biased emitter junction, etc. All of the above processes determine the spontaneous redistribution of the voltage of the power source, as a result of which the power at the output of the transistor begins to exceed the power at its input, i.e. A bipolar transistor will amplify the power.