TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS | Zendy

Caitlin A. Chapin | Zendy; Karen M. Dowling | Zendy; HoangPhuong Phan | Zendy; R. Chen | Zendy; Debbie G. Senesky | Zendy

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TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

Author(s) -

Caitlin A. Chapin,

Karen M. Dowling,

HoangPhuong Phan,

R. Chen,

Debbie G. Senesky

Publication year - 2018

Publication title -

1998 solid-state, actuators, and microsystems workshop technical digest

Language(s) - English

Resource type - Conference proceedings

DOI - 10.31438/trf.hh2018.68

Subject(s) - materials science , high electron mobility transistor , transient (computer programming) , optoelectronics , arrhenius equation , transistor , wide bandgap semiconductor , activation energy , deep level transient spectroscopy , heterojunction , electron , gallium nitride , transient response , electron mobility , condensed matter physics , voltage , electrical engineering , nanotechnology , chemistry , silicon , physics , computer science , layer (electronics) , engineering , operating system , organic chemistry , quantum mechanics

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