Open AccessTEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS
Author(s) -
Caitlin A. Chapin,
Karen M. Dowling,
HoangPhuong Phan,
R. Chen,
Debbie G. Senesky
Publication year - 2018
Publication title -
2018 solid-state, actuators, and microsystems workshop technical digest
Language(s) - English
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2018.68
Subject(s) - transient (computer programming) , materials science , optoelectronics , wide bandgap semiconductor , electron mobility , gallium nitride , transient analysis , condensed matter physics , nanotechnology , transient response , computer science , electrical engineering , physics , operating system , engineering , layer (electronics)