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HIGHLY SENSITIVE III-V NITRIDE BASED PIEZORESISTIVE MICROCANTILEVER USING EMBEDDED ALGAN/GAN HFET
Author(s) -
Abdul Talukdar,
Goutam Koley
Publication year - 2012
Publication title -
1998 solid-state, actuators, and microsystems workshop technical digest
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2012.83
Subject(s) - materials science , piezoresistive effect , optoelectronics , heterojunction , cantilever , nitride , deflection (physics) , transistor , gallium nitride , gauge factor , wide bandgap semiconductor , bending , field effect transistor , nanotechnology , composite material , electrical engineering , voltage , layer (electronics) , optics , physics , medicine , engineering , alternative medicine , pathology , fabrication

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