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ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSORS USING SUSPENDED GRAPHENE NANORIBBON PATTERNED BY SHRINK LITHOGRAPHY
Author(s) -
B. Zhang,
Tianrui Cui
Publication year - 2012
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2012.54
Subject(s) - lithography , graphene , materials science , transistor , field effect transistor , optoelectronics , ion , nanotechnology , electrical engineering , physics , voltage , engineering , quantum mechanics

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