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ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSORS USING SUSPENDED GRAPHENE NANORIBBON PATTERNED BY SHRINK LITHOGRAPHY
Author(s) -
B. Zhang,
Tianhong Cui
Publication year - 2012
Publication title -
1998 solid-state, actuators, and microsystems workshop technical digest
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2012.54
Subject(s) - isfet , ambipolar diffusion , materials science , graphene , field effect transistor , lithography , fabrication , microscale chemistry , nanotechnology , transistor , optoelectronics , plasma , electrical engineering , pathology , mathematics , physics , quantum mechanics , voltage , engineering , medicine , alternative medicine , mathematics education

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