ELECTRICAL CHARACTERIZATION OF PECVD SILICON CARBIDE FOR APPLICATION IN MEMS VAPOR HF SACRIFICIAL RELEASE | Zendy

L. Chen | Zendy; T. Lee | Zendy; Charles Regan | Zendy; Firas Sammoura | Zendy; Christine H. Tsau | Zendy; Mehran Mehregany | Zendy; K. Nunan | Zendy; Kaiwen Yang | Zendy

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ELECTRICAL CHARACTERIZATION OF PECVD SILICON CARBIDE FOR APPLICATION IN MEMS VAPOR HF SACRIFICIAL RELEASE

Author(s) -

L. Chen,

T. Lee,

Charles Regan,

Firas Sammoura,

Christine H. Tsau,

Mehran Mehregany,

K. Nunan,

Kaiwen Yang

Publication year - 2010

Publication title -

1998 solid-state, actuators, and microsystems workshop technical digest

Language(s) - English

Resource type - Conference proceedings

DOI - 10.31438/trf.hh2010.86

Subject(s) - plasma enhanced chemical vapor deposition , materials science , passivation , microelectromechanical systems , silicon carbide , amorphous silicon , optoelectronics , silicon nitride , dielectric , chemical vapor deposition , fabrication , silicon , leakage (economics) , amorphous solid , nanotechnology , composite material , layer (electronics) , crystalline silicon , chemistry , medicine , alternative medicine , organic chemistry , pathology , economics , macroeconomics

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