Open AccessATOMIC LAYER DEPOSITED ALUMINA FOR USE AS AN ETCH BARRIER AGAINST XENON DIFLUORIDE ETCHING
Author(s) -
Gabriel L. Smith,
Ronald G. Polcawich,
Jeffrey S. Pulskamp,
T. Waggoner,
J.F. Conley
Publication year - 2010
Publication title -
1998 solid-state, actuators, and microsystems workshop technical digest
Language(s) - English
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2010.52
Subject(s) - materials science , etching (microfabrication) , silicon , wafer , layer (electronics) , xenon difluoride , photoresist , reactive ion etching , optoelectronics , dry etching , atomic layer deposition , fabrication , resist , microelectromechanical systems , silicon on insulator , nanotechnology , chemistry , organic chemistry , medicine , alternative medicine , pathology
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