
Ultra Deep Anisotropic Silicon Trenches Using Deep Reactive Ion Etching (DRIE)
Author(s) -
Arturo A. Ayón,
X. Zhang,
R. Khanna
Publication year - 2000
Language(s) - English
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2000.82
Subject(s) - deep reactive ion etching , silicon , materials science , etching (microfabrication) , reactive ion etching , optoelectronics , ion , anisotropy , nanotechnology , optics , chemistry , physics , layer (electronics) , organic chemistry