Open AccessUltra Deep Anisotropic Silicon Trenches Using Deep Reactive Ion Etching (DRIE)
Author(s) -
Arturo A. Ayón,
Xiaoge Zhang,
R. Khanna
Publication year - 2000
Publication title -
1998 solid-state, actuators, and microsystems workshop technical digest
Language(s) - English
Resource type - Conference proceedings
DOI - 10.31438/trf.hh2000.82
Subject(s) - deep reactive ion etching , etching (microfabrication) , anisotropy , silicon , reactive ion etching , materials science , engraving , aspect ratio (aeronautics) , range (aeronautics) , optoelectronics , ion , geology , nanotechnology , optics , composite material , chemistry , physics , organic chemistry , layer (electronics)
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