CHARACTERISICS OF POLYSILICON LAYERS AND THEIR APPLICATIONS IN SENSORS
Author(s) -
Ε. Obermeier,
P. Kopystynski,
R. Niessl
Publication year - 1986
Publication title -
1998 solid-state, actuators, and microsystems workshop technical digest
Language(s) - English
Resource type - Conference proceedings
DOI - 10.31438/trf.hh1986.1
Subject(s) - materials science , linearity , optoelectronics , doping , polysilicon depletion effect , pressure sensor , temperature measurement , boron , temperature coefficient , bar (unit) , pressure measurement , silicon , sensitivity (control systems) , electrical engineering , electronic engineering , composite material , transistor , voltage , engineering , mechanical engineering , chemistry , physics , gate oxide , organic chemistry , quantum mechanics , meteorology
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