Open AccessStress-strain state of the heterostructure In1-xGaxAs/GaAs
Author(s) -
Л. С. Лунин,
В.В. Нефедов
Publication year - 2019
Publication title -
èkologičeskij vestnik naučnyh centrov černomorskogo èkonomičeskogo sotrudničestva
Language(s) - English
Resource type - Journals
ISSN - 1729-5459
DOI - 10.31429/vestnik-16-1-83-87
Subject(s) - heterojunction , band diagram , materials science , semiconductor , band gap , condensed matter physics , electronic band structure , substrate (aquarium) , band offset , layer (electronics) , optoelectronics , valence band , nanotechnology , physics , geology , oceanography