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Associação série assimétrica de transistores SOI MOS de camada de silício e óxido enterrado uktrafinos (UTBB) para aplicações analógicas de alto desempenho
Author(s) -
Lígia Martins d'Oliveira
Publication year - 2020
Language(s) - Portuguese
Resource type - Dissertations/theses
DOI - 10.31414/ee.2020.d.131108
Subject(s) - transistor , threshold voltage , silicon on insulator , materials science , optoelectronics , electrical engineering , substrate (aquarium) , voltage , silicon , engineering , oceanography , geology

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