Estudo do tipo octo em ambientes de radiações ionizantes de raios-x
Author(s) -
D. S. Loesch
Publication year - 2019
Language(s) - Portuguese
Resource type - Dissertations/theses
DOI - 10.31414/ee.2019.d.130714
Subject(s) - transconductance , cmos , materials science , optoelectronics , threshold voltage , mosfet , geometry , electrical engineering , transistor , voltage , engineering , mathematics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom