Influência da temperatura no ruído de baixa frequência em transistores SOI de canal gradual (GC SOI) submicrométricos | Zendy

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Influência da temperatura no ruído de baixa frequência em transistores SOI de canal gradual (GC SOI) submicrométricos

Author(s) -

A. R. Molto

Publication year - 2016

Language(s) - Portuguese

Resource type - Dissertations/theses

DOI - 10.31414/ee.2016.d.127866

Subject(s) - physics

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