Open AccessLow Temperature Silicon Oxide and Fluorinated Silicon Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor.
Author(s) -
Jung-Hwan Song
Publication year - 2022
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.31390/gradschool_disstheses.6281
Subject(s) - plasma enhanced chemical vapor deposition , silicon , materials science , chemical vapor deposition , disilane , oxide , silicon oxide , annealing (glass) , analytical chemistry (journal) , equivalent oxide thickness , thin film , chemical engineering , dielectric , silane , nanotechnology , gate oxide , chemistry , optoelectronics , silicon nitride , composite material , organic chemistry , metallurgy , electrical engineering , engineering , transistor , voltage