Open AccessLow Temperature Silicon Oxide and Fluorinated Silicon Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor.
Author(s) -
Juho Song
Publication year - 1996
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.31390/gradschool_disstheses.6281
Subject(s) - plasma enhanced chemical vapor deposition , materials science , silicon , disilane , chemical vapor deposition , silicon oxide , oxide , analytical chemistry (journal) , annealing (glass) , silane , equivalent oxide thickness , thin film , chemical engineering , nanotechnology , gate oxide , optoelectronics , chemistry , composite material , silicon nitride , organic chemistry , metallurgy , electrical engineering , engineering , transistor , voltage
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