Open AccessCu 4O3 thin films deposited by non-reactive rf-magnetron sputtering from a copper oxide target
Author(s) -
M. A. Cruz Almazán,
Enrique Vigueras-Santiago,
RA Lopez,
Sébastien Lopez,
Vicente Sánchez,
Alejandro Esparza,
Consuelo Gómez
Publication year - 2021
Publication title -
revista mexicana de física/revista mexicana de física
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.181
H-Index - 25
eISSN - 2683-2224
pISSN - 0035-001X
DOI - 10.31349/revmexfis.67.495
Subject(s) - materials science , copper , sputtering , oxide , thin film , amorphous solid , sputter deposition , copper oxide , raman spectroscopy , layer (electronics) , metal , metallurgy , analytical chemistry (journal) , composite material , nanotechnology , optics , crystallography , chemistry , physics , chromatography
Copper oxide thin films deposited by sputtering are frequently formed by using metal copper targets in reactive atmospheres. In this report, paramelaconite (Cu4O3) thin films were deposited by non-reactive rf magnetron sputtering. The target used for sputtering was a copper oxide disk fabricated by oxidation of metal copper at 1000 °C for 24 h in airatmosphere. X-ray diffraction (XRD) results showed that the copper oxide target was mainly composed of cupric oxide (CuO) and cuprous oxide (Cu2O) crystals. Raman analyses suggested that the surface of the copper oxide disk is composed by a (CuO) layer. XRD measurements performed to the copper oxide thin films deposited by non-reactive rf magnetron sputtering showed that the film is composed of (Cu4O3) crystals. However,Raman measurements indicated that the Cu4O3 thin films are also composed by amorphous CuO and Cu2O.