Open AccessAn approach to model manufacturing of an enhanced swing differen-tial Colpitts oscillator based on heterostructures to increase density of their elements with account miss-match induced stress. On optimization of annealing
Author(s) -
E. L. Pankratov
Publication year - 2020
Publication title -
mağallaẗ al-kūfaẗ li-l-fiziyā'/journal of kufa - physics
Language(s) - English
Resource type - Journals
eISSN - 2312-6671
pISSN - 2077-5830
DOI - 10.31257/2018/jkp/2020/120202
Subject(s) - colpitts oscillator , heterojunction , swing , materials science , dopant , optoelectronics , annealing (glass) , doping , computer science , electronic engineering , nanotechnology , electrical engineering , voltage controlled oscillator , vackář oscillator , engineering , mechanical engineering , composite material , voltage
In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress