Open AccessEffects of Temperature and Stress on the InGaP/GaAs Heterojunction Phototransistor
Author(s) -
Phuc Hong Than,
Tran Thi Tra Vinh,
Lê Thị Mỹ Hạnh,
Than Quang Tho,
Nguyen V. Quang,
Tran The Son
Publication year - 2021
Publication title -
tạp chí khoa học và công nghệ
Language(s) - English
Resource type - Journals
ISSN - 1859-1531
DOI - 10.31130/ict-ud.2021.112
Subject(s) - passivation , materials science , optoelectronics , common emitter , heterojunction , bipolar junction transistor , stress (linguistics) , photodiode , current density , heterojunction bipolar transistor , transistor , electrical engineering , voltage , composite material , physics , linguistics , philosophy , layer (electronics) , quantum mechanics , engineering
Although the effects of electrical stress and temperature on the performance of the InGaP/GaAs heterojunction bipolar transistors (HBTs) have been widely studied and reported, little or none was reported for the InGaP/GaAs heterojunction phototransistors (HPTs) in the literature. In this paper, we discuss the temperature-dependent characteristic of InGaP/GaAs HPTs before and after electrical stress and assess the effectiveness of the emitter-ledge passivation, which was found to effectively keep the InGaP/GaAs HBTs from degrading at higher temperature or after an electrical stress. The emitter-ledge passivation is also effective keeping a higher optical gain even at higher temperature. An electrical stress was given to the HPTs by keeping the collector current at 60 mA for 15 min. Since the collector current density as an electrical stress is 24 A/cm2 and much smaller than the stress usually given to smaller HBTs for the stress test, the decreased optical gain was not observed when it was given at room temperature. However, when it was given at 420 K, significant decreases of the current gain and optical gain were observed at any temperature. Nevertheless, the emitter-ledge passivation was found effective in minimizing the decreases of the current gain and optical gain.