Open AccessHigh-Voltage Silicon Diode Simulation, the Dependences of Its Current Density from Temperature Construction
Author(s) -
Н. Л. Лагунович
Publication year - 2020
Publication title -
problemy razrabotki perspektivnyh mikro- i nanoèlektronnyh sistem ...
Language(s) - English
Resource type - Journals
ISSN - 2078-7707
DOI - 10.31114/2078-7707-2020-2-22-28
Subject(s) - diode , current (fluid) , materials science , silicon , voltage , optoelectronics , current density , electrical engineering , engineering physics , physics , engineering , quantum mechanics