Open AccessMODELING OF THE HIGH-VOLTAGE SILICON SCHOTTKY DIODE
Author(s) -
Dmitriy Medvedev,
Aleksey Malahanov
Publication year - 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.30987/conferencearticle_61c997f09d8527.44162014
Subject(s) - schottky diode , silicon , optoelectronics , materials science , voltage , diode , metal–semiconductor junction , electronic engineering , electrical engineering , engineering
The results of modeling of the high-voltage silicon Schottky diode in the device-technological design system Synopsys Sentaurus TCAD was presented.