Open AccessTHE INFLUENCE OF TECHNOLOGICAL FACTORS ON PHOTOCONVERTERS’ ELECTROPHYSICAL CHARACTERISTICS
Author(s) -
Аліна Олександрівна Ніконова,
AUTHOR_ID,
O. Y. Nebesniuk,
Зоя Андріївна Ніконова,
AUTHOR_ID,
AUTHOR_ID
Publication year - 2021
Publication title -
vìsnik kremenčucʹkogo deržavnogo polìtehničnogo unìversitetu ìmenì mihajla ostrogradsʹkogo/vìsnik kremenčucʹkogo deržavnogo polìtehnìčnogo unìversitetu ìmenì mihajla ostrogradsʹkogo
Language(s) - English
Resource type - Journals
eISSN - 2072-8263
pISSN - 1995-0519
DOI - 10.30929/1995-0519.2021.3.117-123
Subject(s) - heterojunction , optoelectronics , materials science , engineering physics , silicon , semiconductor , layer (electronics) , deposition (geology) , photovoltaic system , nanotechnology , process engineering , electrical engineering , physics , engineering , paleontology , sediment , biology
Purpose. Solar energy represents a sensible use alternative of thermal, chemical and nuclear current sources. Solar radiation can satisfy the growing needs of humanity with its energetic resources. Nowadays the actual problem is the development and production, of high-effective and economical photo converters (PC). Thus we need new technologies and materials. Semiconductor PC allows producing solar energy converting in electric with the help of homo-or heterojunctions. About 91 % of falling luminous flux energy is converted into electrical current through the charge carriers release out of semiconductor’s volume. The base of their quality raise is getting high-effective silicon nanostructures, their using will raise considerably PC efficiency. Due to their high efficiency, temperature stability, and low sensitivity to radiation exposure, heterostructure-based photoconverters are the most promising for the use. Methodology. In the article the technology of PC production on the base of silicon structures with heterojunctions ITO/n-Si/n+-Si is proposed. Getting of these layers with the pulverization method on the surface of silicon plates is based on the results of the heating temperature optimal values determination, deposition speed and ITO layer thickness, outflow speed of the gas stream from the spray nozzle, concentration of InCl3 to SnCl4 in spirit and other factors. Results. The represented conception of technology development ITO/n- Si/n+- Si junctions helped to define reasons that determine the character of ITO layer conductivity, depending on SnO2 content in it and their influence on the quality of photoelectrical converters on their base. Originality. The technological peculiarities of getting these layers with pulverization method, operational reliability and efficiency are revealed. Practical value. These tasks solution will lead to the modern technological processes modelling, to the raising of PC quality and, in the case of its consumer properties maintaining, to the use of modern supplies of silicon production and semiconductive materials. References 11, figures 2.