Open AccessIMPROVEMENT OF THE IGBT MATHEMATICAL MODEL WITH NONLINEARITY OF JUNCTION CAPACITANCES
Author(s) -
Sviatoslav Vasylets,
Kateryna Vasylets
Publication year - 2018
Publication title -
vìsnik kremenčucʹkogo deržavnogo polìtehničnogo unìversitetu ìmenì mihajla ostrogradsʹkogo/vìsnik kremenčucʹkogo deržavnogo polìtehnìčnogo unìversitetu ìmenì mihajla ostrogradsʹkogo
Language(s) - English
Resource type - Journals
eISSN - 2072-8263
pISSN - 1995-0519
DOI - 10.30929/1995-0519.2018.1.9-14
Subject(s) - insulated gate bipolar transistor , nonlinear system , electrical engineering , materials science , optoelectronics , electronic engineering , engineering physics , physics , engineering , voltage , quantum mechanics