Open AccessStatic model of power silicon MOSFET.
Author(s) -
Vadim N. Biryukov,
V.R. Haritonova,
Dmitry A. Portnykh
Publication year - 2020
Publication title -
journal of radio electronics
Language(s) - Uncategorized
Resource type - Journals
ISSN - 1684-1719
DOI - 10.30898/1684-1719.2020.8.8
Subject(s) - mosfet , power mosfet , silicon , power (physics) , electrical engineering , materials science , engineering physics , optoelectronics , engineering , physics , transistor , voltage , quantum mechanics