Open AccessNumerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS
Author(s) -
Rajab Yahyazadeh,
Zahra Hashempour
Publication year - 2019
Publication title -
journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 2600-7924
pISSN - 2229-8460
DOI - 10.30880/jst.2019.11.01.001
Subject(s) - scattering , transistor , optoelectronics , induced high electron mobility transistor , electron , electron mobility , channel (broadcasting) , high electron mobility transistor , poisson's equation , materials science , field effect transistor , wave function , band bending , condensed matter physics , computational physics , physics , optics , electrical engineering , atomic physics , engineering , quantum mechanics , voltage
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