Open AccessThe Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films
Author(s) -
Ghasaq Ali Tomaa,
Alaa J. Ghazai
Publication year - 2021
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v19i50.665
Subject(s) - materials science , porous silicon , wafer , etching (microfabrication) , silicon , scanning electron microscope , surface roughness , layer (electronics) , porosity , surface finish , nanotechnology , composite material , crystallography , optoelectronics , chemistry
Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.