Open AccessEffect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique
Author(s) -
Hussein Jamal Abdul Karim,
Ghuson H. Mohammed
Publication year - 2021
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v19i49.608
Subject(s) - materials science , annealing (glass) , dopant , hall effect , electrical resistivity and conductivity , thin film , conductivity , pulsed laser deposition , metal , substrate (aquarium) , optoelectronics , nanotechnology , doping , composite material , metallurgy , electrical engineering , chemistry , oceanography , engineering , geology
In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the electrical properties of the films were described. It was observed through Hall Effect measurements that the films loaded vectors of the shape N and the type P.