Open AccessGas Sensing of (SnO2)1-x(ZnO)x Composite Associating with Electrical Properties
Author(s) -
Dunia Yas
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v17i43.480
Subject(s) - materials science , crystallinity , tin oxide , oxide , deposition (geology) , tin , analytical chemistry (journal) , conductivity , pulsed laser deposition , diffraction , composite number , semiconductor , electrical resistivity and conductivity , zinc , electron mobility , thin film , optoelectronics , composite material , nanotechnology , optics , metallurgy , electrical engineering , chemistry , paleontology , physics , biology , engineering , chromatography , sediment
Semiconductor-based gas sensors were prepared, that use n-type tin oxide (SnO2) and tin oxide: zinc oxide composite (SnO2)1-x(ZnO)x at different x ratios using pulse laser deposition at room temperature. The prepared thin films were examined to reach the optimum conditions for gas sensing applications, namely X-ray diffraction, Hall effect measurements, and direct current conductivity. It was found that the optimum crystallinity and maximum electron density, corresponding to the minimum charge carrier mobility, appeared at 10% ZnO ratio. This ratio appeared has the optimum NO2 gas sensitivity for 5% gas concentration at 300 °C working temperature.
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