Open AccessSensitivity of gold nanoparticles doped in porous silicon
Author(s) -
Uday M. Nayef
Publication year - 2018
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v15i35.46
Subject(s) - materials science , colloidal gold , porous silicon , wafer , doping , etching (microfabrication) , nanoparticle , silicon , suspension (topology) , nanotechnology , chemical engineering , layer (electronics) , optoelectronics , mathematics , homotopy , pure mathematics , engineering
In this work gold nanoparticles (AuNPs), were prepared. Chemical method (Seed-Growth) was used to prepare it, then doping AuNPs with porous silicon (PS), used silicon wafer p-type to produce (PS) the processes doping achieved by electrochemical etching, the solution etching consist of HF, ethanol and AuNPs suspension, the result UV-visible absorption for AuNPs suspension showed the single peak located at ~(530 – 521) nm that related to SPR, the single peak is confirmed that the NPs present in the suspension is spherical shape and non-aggregated. X-ray diffraction analysis indicated growth AuNPs with PS. compare the PS layer without AuNPs and with AuNPs doped for electrical properties and sensitivity properties we found AuNPs:PS is more better than PS layer alone that refer to the AuNPs is improve properties PS.