Open AccessElectrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition
Author(s) -
Raied K. Jamal
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v14i29.218
Subject(s) - non blocking i/o , materials science , dopant , hall effect , annealing (glass) , doping , pulsed laser deposition , substrate (aquarium) , semiconductor , thin film , activation energy , electrical resistivity and conductivity , conductivity , analytical chemistry (journal) , optoelectronics , nanotechnology , composite material , chemistry , electrical engineering , biochemistry , oceanography , engineering , chromatography , geology , catalysis
The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.