Open AccessEstimation of electron temperature for SiO2 plasma induced by laser
Author(s) -
Mohammed R. Abdulameer
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v13i28.250
Subject(s) - langmuir probe , electron temperature , plasma , materials science , plume , electron , plasma diagnostics , temperature measurement , laser ablation , silicon , plasma parameters , atomic physics , laser , analytical chemistry (journal) , optics , optoelectronics , chemistry , physics , chromatography , quantum mechanics , thermodynamics
In this work; Silicon dioxide (SiO2) were fabricated by pulsedlaser ablation (PLA). The electron temperature was calculated byreading the data of I-V curve of Langmuir probe which wasemployed as a diagnostic technique for measuring plasma properties.Pulsed Nd:YA Glaser was used for measuring the electrontemperature of SiO2 plasma plume under vacuum environment withvarying both pressure and axial distance from the target surface. Theelectron temperature has been measured experimentally and theeffects of each of pressure and Langmuir probe distance from thetarget were studied. An inverse relationship between electrontemperature and both pressure and axial distance was observed.