Open AccessThermoelectric power for thermally deposited cadmium telluride films
Author(s) -
M. F. A. Alias
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v13i26.281
Subject(s) - cadmium telluride photovoltaics , materials science , telluride , bismuth telluride , vacuum evaporation , thermoelectric effect , evaporation , semiconductor , thermal , seebeck coefficient , composite material , optoelectronics , thin film , metallurgy , thermal conductivity , nanotechnology , thermodynamics , physics
Thermal evaporation method has used for depositing CdTe filmson corning glass slides under vacuum of about 10-5mbar. Thethicknesses of the prepared films are400 and 1000 nm. The preparedfilms annealed at 573 K. The structural of CdTe powder and preparedfilms investigated. The hopping and thermal energies of as depositedand annealed CdTe films studied as a function of thickness. Apolycrystalline structure observed for CdTe powder and preparedfilms. All prepared films are p-type semiconductor. The hoppingenergy decreased as thickness increased, while thermal energyincreased.