Open AccessEffect of Pb dopant On A.C mechanism of ZnS thin films
Author(s) -
Salma M. Shaban
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v12i25.307
Subject(s) - materials science , dopant , dielectric , doping , conductivity , thin film , atmospheric temperature range , evaporation , vacuum evaporation , range (aeronautics) , analytical chemistry (journal) , composite material , optoelectronics , nanotechnology , chemistry , thermodynamics , physics , chromatography
Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.