Open AccessThe dependence of resonant tunneling transmission coefficient on well width and barriers number of GaN/Al0.3Ga0.7N nanostructured system
Author(s) -
Moafak Cadim Abdulrida
Publication year - 2019
Publication title -
iraqi journal of physics
Language(s) - English
Resource type - Journals
eISSN - 2664-5548
pISSN - 2070-4003
DOI - 10.30723/ijp.v11i21.374
Subject(s) - quantum tunnelling , transmission coefficient , superlattice , materials science , heterojunction , condensed matter physics , resonance (particle physics) , resonant tunneling diode , transmission (telecommunications) , rectangular potential barrier , physics , optoelectronics , atomic physics , optics , quantum well , telecommunications , laser , computer science
A numerical computation for determination transmission coefficient and resonant tunneling energies of multibarriers heterostructure has been investigated. Also, we have considered GaN/Al0.3Ga0.7N superlattice system to estimate the probability of resonance at specific energy values, which are less than the potential barrier height. The transmission coefficient is determined by using the transfer matrix method and accordingly the resonant energies are obtained from the T(E) relation. The effects of both well width and number of barriers (N) are observed and discussed. The numbers of resonant tunneling peaks are generally increasing and they become sharper with the increasing of N. The resonant tunneling levels are shifted inside the well by increasing the well width and vice versa. These features and the transmission coefficient as a function of incident energetic particles play an important role in fabrication of high speed devices and a good factor for determination the peak-to-valley ratio of resonant tunneling devices respectively.