Open AccessA Study of Different SRAM Cell Designs
Publication year - 2021
Publication title -
international journal of emerging trends in engineering research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.218
H-Index - 14
ISSN - 2347-3983
DOI - 10.30534/ijeter/2021/24932021
Subject(s) - static random access memory , computer science , microprocessor , memory refresh , leakage (economics) , embedded system , semiconductor memory , memory cell , power consumption , random access memory , chip , power (physics) , electrical engineering , transistor , computer hardware , computer memory , engineering , voltage , telecommunications , economics , macroeconomics , physics , quantum mechanics
Presently, huge advancements are being witnessed in the electronics sector like AR, AI, driverless cars, smart homes, portable devices like mobile phones, etc. that requires the improvement of memory technology for efficient working. Memory plays a major role in the present scenario of improvements and growth. Out of different forms of memory devices, the most popular and presently used type of form is the semiconductor MOS memory, specifically SRAM (Static Random-Access Memory) that plays a very important role in the microprocessor domain as it covers a large portion of the chip. But with the increased scale of integration, leakage power, leakage current, and delay becomes a problem in the designing of an SRAM cell. This paper is a review of SRAM cells that have been proposed in the past for achieving improvement in SRAM cell parameters like power consumption, delay, leakage current, read and write stability, better cell operations, etc.