Open AccessElectrophysical properties of Silicon doped by Nickel impurity using Diffusion method
Author(s) -
Sharifa B. Utamuradova
Publication year - 2020
Publication title -
international journal of emerging trends in engineering research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.218
H-Index - 14
ISSN - 2347-3983
DOI - 10.30534/ijeter/2020/102872020
Subject(s) - impurity , doping , silicon , materials science , nickel , diffusion , analytical chemistry (journal) , metallurgy , optoelectronics , chemistry , thermodynamics , physics , chromatography , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom